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NCP81045 Datasheet(PDF) 5 Page - ON Semiconductor

Part # NCP81045
Description  Single Synchronous Step-Down Controller
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP81045 Datasheet(HTML) 5 Page - ON Semiconductor

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NCP81045
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5
PIN FUNCTION DESCRIPTION
Pin No.
Symbol
Description
1
VIN
Input voltage used for feed forward in switcher operation.
2
VCC
Supply for analog circuit
3
SYN
Synchronization interleaving use.
4
EN
This pin serves as two functions. Enable: Logic control for enabling the switcher. MASTER/SLAVE: To
program the device as MASTER or SLAVE mode at dual device operation.
5
COMP
Output of the error amplifier.
6
FB
Output voltage feed back.
7
IDRP/OCP
Current limit programmable and setting for AVP.
8
CS−/Vo
Inductor current differential sense inverting input.
9
CS+
Inductor current differential sense non−inverting input.
10
PGND
Ground reference and high−current return path for the bottom gate driver.
11
DL/TRESET
Gate driver output of bottom N−channel MOSFET. It also has the function for TRE threshold setting.
12
VCCP
Supply for bottom gate driver.
13
BST
Top gate driver input supply, a bootstrap capacitor connection between SWN and this pin.
14
DH
Gate driver output of top N−channel MOSFET.
15
SWN
Switch node between top MOSFET and bottom MOSFET.
16
PGOOD
Power good indicator of the output voltage. High impendence if power good (in regulation). Low im-
pendence if power not good.
17
TPAD
Copper pad on bottom of IC used for heat sinking. This pin should be connected to the analog ground
plane under the IC.
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCC Power Supply Voltage to AGND
VCC
−0.3, 6.0
V
VIN Supply to AGND
VIN
−0.3, 30
V
High−side Gate Drive Supply: BST to SWN
High−side Gate Drive Voltage: DH to SWN
Low−side Gate Drive Supply: VCCP to PGND
Low−side Gate Drive Voltage: DL to PGND
VBST−VSWN,
VDH−VSWN,
VCCP−VPGND,
VDL−VPGND,
−0.3, 6.0
V
Input / Output Pins to AGND
VIO
−0.3, 6.0
V
Switch Node SWN−PGND
VSWN
−5 V (< 100 ns)
30 V
V
High−Side Gate Drive/Low−Side Gate Drive Outputs
DH, DL
−3(DC)
V
PGND
VPGND
−0.3, 0.3
V
Thermal Characteristics
Thermal Resistance Junction−to−Ambient (QFN16 Package)
RqJA
48
°C/W
Operating Junction Temperature Range (Note 1)
TJ
−40 to + 150
°C
Operating Ambient Temperature Range
TA
− 40 to + 85
°C
Storage Temperature Range
Tstg
− 55 to +150
°C
Moisture Sensitivity Level
MSL
1
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.
1. Internally limited by thermal shutdown, 150°C min.


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