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SUT484J Datasheet(PDF) 2 Page - AUK corp

Part No. SUT484J
Description  NPN/PNP Epitaxial Planar Silicon Transistor
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Maker  AUK [AUK corp]
Homepage  https:www.auk.co.kr
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SUT484J Datasheet(HTML) 2 Page - AUK corp

   
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KST-6002-004
2
SUT484J
Absolute maximum ratings (Tr1, Tr2)
Ta=25
°C
Ratings
Characteristic
Symbol
Tr1
Tr2
Unit
Collector-Base voltage
VCBO
-50
60
V
Collector-Emitter voltage
VCEO
-50
50
V
Emitter-base voltage
VEBO
-5
5
V
Collector current
IC
-150
150
mA
Collector dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55~150
°C
Electrical Characteristics (Tr1 : PNP)
Ta=25
°C
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=-100µA, IE=0
-50
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-50
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=-10µA, IC=0
-5
-
-
V
Collector cut-off current
ICBO
VCB=-50V, IE=0
-
-
-0.1
µA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-
-
-0.1
µA
DC current gain
hFE
VCE=-6V, IC=-2mA
120
-
400
-
Collector-Emitter saturation voltage
VCE(sat)
IC=-100mA, IB=-10mA
-
-
-0.3
V
Transition frequency
fT
VCE=-10V, IC=-1mA,
f=100MHz
80
-
-
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
4
7
pF
Electrical Characteristics (Tr2 : NPN)
Ta=25
°C
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=100µA, IE=0
60
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=1mA, IB=0
50
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=10µA, IC=0
5
-
-
V
Collector cut-off current
ICBO
VCB=60V, IE=0
-
-
0.1
µA
Emitter cut-off current
IEBO
VEB=5V, IC=0
-
-
0.1
µA
DC current gain
hFE
VCE=6V, IC=2mA
70
-
700
-
Collector-Emitter saturation voltage
VCE(sat)
IC=100mA, IB=10mA
-
-
0.25
V
Transition frequency
fT
VCE=10V, IC=1mA,
f=100MHz
80
-
-
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
2
3.5
pF


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