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100352 Datasheet(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # 100352
Description  Low Power 8-Bit Buffer with Cut-Off Drivers
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

100352 Datasheet(HTML) 4 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Above which the useful life may be impaired
Storage Temperature (T
STG)
−65˚C to +150˚C
Maximum Junction Temperature (T
J)
Ceramic
+175˚C
V
EE Pin Potential to
Ground Pin
−7.0V to +0.5V
Input Voltage (DC)
V
EE to +0.5V
Output Current (DC Output HIGH)
−100 mA
ESD (Note 2)
≥2000V
Recommended Operating
Conditions
Case Temperature (T
C)
Military
−55˚C to +125˚C
Supply Voltage (V
EE)
−5.7V to −4.2V
Note 1: Absolute maximum ratings are those values beyond which the de-
vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
V
EE = −4.2V to −5.7V, VCC = VCCA = GND, TC = −55˚C to +125˚C
Symbol
Parameter
Min
Max
Units
T
C
Conditions
Notes
V
OH
Output HIGH Voltage
−1025
−870
mV
0˚C to +125˚C
V
IN = VIH(Max)
or V
IL(Min)
Loading
with
25
Ω to
−2.0V
(Notes 3,
4, 5)
−1085
−870
mV
−55˚C
V
OL
Output LOW Voltage
−1830
−1620
mV
0˚C to +125˚C
−1830
−1555
mV
−55˚C
V
OHC
Output HIGH Voltage
−1035
mV
0˚C to +125˚C
V
IN = VIH(Min)
or V
IL(Max)
Loading
with
25
Ω to
−2.0V
(Notes 3,
4, 5)
−1085
mV
−55˚C
V
OLC
Output LOW Voltage
−1610
mV
0˚C to +125˚C
−1555
mV
−55˚C
V
OLZ
Cut-Off LOW Voltage
−1950
mV
0˚C to +125˚C
V
IN = VIH(Min),or
V
IL(Max)
OEN
=HIGH
(Notes 3,
4, 5)
−1850
−55˚C
V
IH
Input HIGH Voltage
−1165
−870
mV
−55˚C to +125˚C
Guaranteed HIGH signal
1, 2, 3, 4
for All inputs
V
IL
Input LOW Voltage
−1830
−1475
mV
−55˚C to +125˚C
Guaranteed LOW signal
for All inputs
(Notes 3,
4, 5, 6)
I
IL
Input LOW Current
0.50
µA
−55˚C to +125˚C
V
EE = 4.2V
(Notes 3,
4, 5)
V
IN = VIL(Min)
I
IH
Input HIGH Current
240
µA
0˚C to + 125˚C
V
EE = −5.7V
(Notes 3,
4, 5)
340
µA
−55˚C
V
IN = VIH(Max)
I
EE
Power Supply Current
−55˚C to +125˚C
Inputs Open
(Notes 3,
4, 5)
−145
−55
mA
V
EE = −4.2V to −4.8V
−150
V
EE = −4.2V to −5.7V
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.
Note 6: Guaranteed by applying specified input condition and testing VOH/VOL.
AC Electrical Characteristics
V
EE = −4.2V to −5.7V, VCC = VCCA = GND
Symbol
Parameter
T
C = −55˚C
T
C = +25˚C
T
C +125˚C
Units
Conditions
Notes
Min
Max
Min
Max
Min
Max
t
PLH
Propagation Delay
0.30
2.60
0.50
2.40
0.50
2.70
ns
Figures 1, 2
(Notes 7,
8, 10, 11)
t
PHL
Dn to Output
t
PZH
Propagation Delay
1.20
4.40
1.40
4.20
1.20
4.40
ns
Figures 1, 2
(Notes 7,
8, 9, 11)
t
PHZ
OEN to Output
0.70
3.00
0.70
2.80
0.70
3.20
www.national.com
4


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