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100352 Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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100352 Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 8 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Above which the useful life may be impaired Storage Temperature (T STG) −65˚C to +150˚C Maximum Junction Temperature (T J) Ceramic +175˚C V EE Pin Potential to Ground Pin −7.0V to +0.5V Input Voltage (DC) V EE to +0.5V Output Current (DC Output HIGH) −100 mA ESD (Note 2) ≥2000V Recommended Operating Conditions Case Temperature (T C) Military −55˚C to +125˚C Supply Voltage (V EE) −5.7V to −4.2V Note 1: Absolute maximum ratings are those values beyond which the de- vice may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Note 2: ESD testing conforms to MIL-STD-883, Method 3015. Military Version DC Electrical Characteristics V EE = −4.2V to −5.7V, VCC = VCCA = GND, TC = −55˚C to +125˚C Symbol Parameter Min Max Units T C Conditions Notes V OH Output HIGH Voltage −1025 −870 mV 0˚C to +125˚C V IN = VIH(Max) or V IL(Min) Loading with 25 Ω to −2.0V (Notes 3, 4, 5) −1085 −870 mV −55˚C V OL Output LOW Voltage −1830 −1620 mV 0˚C to +125˚C −1830 −1555 mV −55˚C V OHC Output HIGH Voltage −1035 mV 0˚C to +125˚C V IN = VIH(Min) or V IL(Max) Loading with 25 Ω to −2.0V (Notes 3, 4, 5) −1085 mV −55˚C V OLC Output LOW Voltage −1610 mV 0˚C to +125˚C −1555 mV −55˚C V OLZ Cut-Off LOW Voltage −1950 mV 0˚C to +125˚C V IN = VIH(Min),or V IL(Max) OEN =HIGH (Notes 3, 4, 5) −1850 −55˚C V IH Input HIGH Voltage −1165 −870 mV −55˚C to +125˚C Guaranteed HIGH signal 1, 2, 3, 4 for All inputs V IL Input LOW Voltage −1830 −1475 mV −55˚C to +125˚C Guaranteed LOW signal for All inputs (Notes 3, 4, 5, 6) I IL Input LOW Current 0.50 µA −55˚C to +125˚C V EE = 4.2V (Notes 3, 4, 5) V IN = VIL(Min) I IH Input HIGH Current 240 µA 0˚C to + 125˚C V EE = −5.7V (Notes 3, 4, 5) 340 µA −55˚C V IN = VIH(Max) I EE Power Supply Current −55˚C to +125˚C Inputs Open (Notes 3, 4, 5) −145 −55 mA V EE = −4.2V to −4.8V −150 V EE = −4.2V to −5.7V Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures. Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8. Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8. Note 6: Guaranteed by applying specified input condition and testing VOH/VOL. AC Electrical Characteristics V EE = −4.2V to −5.7V, VCC = VCCA = GND Symbol Parameter T C = −55˚C T C = +25˚C T C +125˚C Units Conditions Notes Min Max Min Max Min Max t PLH Propagation Delay 0.30 2.60 0.50 2.40 0.50 2.70 ns Figures 1, 2 (Notes 7, 8, 10, 11) t PHL Dn to Output t PZH Propagation Delay 1.20 4.40 1.40 4.20 1.20 4.40 ns Figures 1, 2 (Notes 7, 8, 9, 11) t PHZ OEN to Output 0.70 3.00 0.70 2.80 0.70 3.20 www.national.com 4 |
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