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SBE002-TL-W Datasheet(PDF) 1 Page - ON Semiconductor |
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1 / 4 page 60414HK TC-00003128/91912TKIM/O0899GI(KT) No.6343-1/4 http://onsemi.com Semiconductor Components Industries, LLC, 2014 June, 2014 SBE002 Schottky Barrier Diode 50V, 1A, Low IR, Single CPH6 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Applications • Highfrequencyrectification(switchingregulators,converters,choppers) Features • Lowforwardvoltage(VFmax=0.55V) • Halogenfreecompliance • Fastreverserecoverytime(trrmax=10ns) • Lowswitchingnoise • Lowleakagecurrentandhighreliabilityduetohighlyreliableplanarstructure • Ultrasmallpackage,permittingSBE002-appliedsetstobecompactandslim(mountingheight0.9mm) • Largeallowablepowerdissipation Specifications Absolute Maximum RatingsatTa=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage VRRM 50 V Nonrepetitive Peak Reverse Surge Voltage VRSM 55 V Average Output Current IO 1 A Surge Forward Current IFSM 50Hz sine wave, 1 cycle 10 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Package Dimensions unit : mm (typ) 7018A-012 Ordering number : EN6343B Product & Package Information •Package :CPH6 •JEITA,JEDEC :SC-74,SOT-26,SOT-457 •MinimumPackingQuantity :3,000pcs./reel Packing Type: TL Marking Electrical Connection 2 65 4 13 TL 1 : Cathode 2 : Cathode 3 : No contact 4 : Anode 5 : Cathode 6 : Cathode CPH6 3 2 1 64 5 2.9 0.05 0.4 0.15 0.95 SBE002-TL-E SBE002-TL-W ORDERING INFORMATION Seedetailedorderingandshippinginformationonpage2ofthisdatasheet. |
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