NTMFD4C86NT3G datasheet(4/12 Pages) ONSEMI

Part #	NTMFD4C86NT3G

Description	Dual N-Channel SO8FL

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMFD4C86N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

FET

CHARGES, CAPACITANCES & GATE RESISTANCE

Total Gate Charge

Q1

QG(TOT)

VGS = 4.5 V, VDS = 15 V; ID = 30 A

10.9

nC

Q2

21.6

Threshold Gate Charge

Q1

QG(TH)

1.2

Q2

1.4

Gate−to−Source Charge

Q1

QGS

3.4

Q2

8.6

Gate−to−Drain Charge

Q1

QGD

5.4

Q2

5.5

Total Gate Charge

Q1

QG(TOT)

VGS = 10 V, VDS = 15 V; ID = 30 A

22.2

nC

Q2

47.5

Gate Resistance

Q1

RG

TA = 25°C

1.0

W

Q2

1.0

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Q1

td(ON)

VGS = 4.5 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

8.9

ns

Q2

8.3

Rise Time

Q1

tr

21.2

Q2

15.1

Turn−Off Delay Time

Q1

td(OFF)

15.3

Q2

19.3

Fall Time

Q1

tf

4.4

Q2

4.2

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Q1

td(ON)

VGS = 10 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

6.7

ns

Q2

6.3

Rise Time

Q1

tr

19.5

Q2

13.8

Turn−Off Delay Time

Q1

td(OFF)

20.1

Q2

22.8

Fall Time

Q1

tf

2.8

Q2

3.2

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Voltage

Q1

VSD

VGS = 0 V,

IS = 10 A

TJ = 25°C

0.80

V

TJ = 125°C

0.60

Q2

VGS = 0 V,

IS = 10 A

TJ = 25°C

0.78

TJ = 125°C

0.62

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Test: pulse width

≤ 300 ms, duty cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

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