August 07,2014-REV.01

Page 2

o

C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

500

-

-

V

Gate Threshold Voltage

2

3.02

4

V

Drain-Source On-State Resistance

-

7.6

9

Ω

Zero Gate Voltage Drain Current

-

0.02

1.0

uA

Gate-Source Leakage Current

-

+20

+100

nA

Diode Forward Voltage

-

0.86

1.4

V

Dynamic

(Note 5)

Total Gate Charge

(Note 2,3)

-

4.2

-

nC

Gate-Source Charge

-

1.7

-

Gate-Drain Charge

-

1.4

-

Input Capacitance

Ciss

f=1.0MHZ

-

95

-

pF

Output Capacitance

Coss

-

23

-

Reverse Transfer Capacitance

Crss

-

0.3

-

Turn-On Delay Time

(Note 2,3)

-

5

-

ns

Turn-On Rise Time

-

20

-

Turn-Off Delay Time

-

8

-

Turn-Off Fall Time

-

24

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

---

-

-

1

A

Maximum Pulsed Drain-Source

Diode Forward Current

---

-

-

4

A

Reverse Recovery Time

trr

(Note 2)

-

155

-

ns

Reverse Recovery Charge

Qrr

-

0.53

-

uC

NOTES :

1.

2.

Pulse width<300us, Duty cycle<2%

3.

Essentially independent of operating temperature typical characteristics.

4.

defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.

5.

Guaranteed by design, not subject to production testing