NVMFS5833NWFT1G datasheet(1/6 Pages) ONSEMI

Part #	NVMFS5833NWFT1G

Description	Single N?묬hannel Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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September, 2014 − Rev. 1

1

Publication Order Number:

NVMFS5833N/D

NVMFS5833N

Power MOSFET

40 V, 7.5 m

W, 86 A, Single N−Channel,

SO−8FL

Features

• Low RDS(on)

• Low Capacitance

• Optimized Gate Charge

• AEC−Q101 Qualified and PPAP Capable

• NVMFS5833NWF − Wettable Franks Option for Enhanced Optical

Inspection

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

40

V

Gate−to−Source Voltage

VGS

"20

V

Continuous Drain Cur-

rent RYJ−mb

(Notes 1, 2, 3 & 4)

Steady

State

Tmb = 25°C

ID

86

A

Tmb = 100°C

61

Power Dissipation

RYJ−mb (Notes 1, 2, 3)

Tmb = 25°C

PD

112

W

Tmb = 100°C

56

Continuous Drain Cur-

rent RqJA

(Notes 1, 3 & 4)

Steady

State

TA = 25°C

ID

16

A

TA = 100°C

11

Power Dissipation

RqJA (Notes 1 & 3)

TA = 25°C

PD

3.7

W

TA = 100°C

1.8

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

324

A

Operating Junction and Storage Temperature

TJ, Tstg

− 55 to

175

°C

Source Current (Body Diode)

IS

86

A

Single Pulse Drain−to−Source Avalanche

Energy (TJ = 25°C, IL(pk) = 36 A, L = 0.1 mH)

EAS

65

mJ

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Mounting Board (top) − Steady

State (Notes 2, 3)

RYJ−mb

1.3

°C/W

Junction−to−Ambient − Steady State (Note 3)

RqJA

41

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (

Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as

1 second are higher but are dependent on pulse duration and duty cycle/

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING DIAGRAM

http://onsemi.com

5833

= Specific Device Code

xx

= N (NVMFS5833N) or

= WF (NVMFS5833NWF)

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

5833xx

AYWZZ

1

V(BR)DSS

RDS(ON) MAX

ID MAX

40 V

7.5 m

W @ 10 V

86 A

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5)

Device

Package

Shipping†

ORDERING INFORMATION

NVMFS5833NT1G

SO−8FL

(Pb−Free)

1500 /

Tape & Reel

NVMFS5833NT3G

SO−8FL

(Pb−Free)

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

S

G

D

NVMFS5833NWFT1G

SO−8FL

(Pb−Free)

1500 /

Tape & Reel

NVMFS5833NWFT3G

SO−8FL

(Pb−Free)

5000 /

Tape & Reel

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