NVMFS5833NT1G datasheet(3/6 Pages) ONSEMI

Part #	NVMFS5833NT1G

Description	Single N?묬hannel Power MOSFET

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NVMFS5833N

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TYPICAL CHARACTERISTICS

0

10

20

30

40

50

60

70

80

90

110

0

0.5

1.0

1.5

2.0

3.0

Figure 1. On−Region Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

10 V

VGS = 6 V

5.5 V

8 V

4.5 V

4.0 V

5.0 V

TJ = 25°C

0

10

20

30

40

50

60

70

80

12

3

4

7

VDS = 3 V

TJ = 25°C

TJ = −55°C

TJ = 125°C

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (V)

5

7

9

11

19

21

23

45

6

8

10

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID = 40 A

TJ = 25°C

6.0

6.2

6.3

6.4

10

20

30

40

50

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (A)

TJ = 25°C

VGS = 10 V

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

−50

−25

0

25

50

75

100

125

150

175

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

VGS = 10 V

ID = 40 A

10

1000

10000

100000

20

25

30

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 85°C

TJ = 150°C

VGS = 0 V

100

2.5

56

90

100

110

79

17

15

13

6.1

15

10

5

100

TJ = 125°C

5.9

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