NVMFS5C646NL

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2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

60

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

15.5

mV/

°C

Zero Gate Voltage Drain Current

1.0

mA

250

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

1.2

2.0

V

Threshold Temperature Coefficient

−4.9

mV/

°C

Drain−to−Source On Resistance

3.8

4.7

m

W

5.0

6.3

Forward Transconductance

105

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

2164

pF

Output Capacitance

900

Reverse Transfer Capacitance

17

Total Gate Charge

15.7

nC

Total Gate Charge

33.7

Threshold Gate Charge

1.5

Gate−to−Source Charge

5.6

Gate−to−Drain Charge

5.1

Plateau Voltage

2.8

V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

10.4

ns

Rise Time

14.9

Turn−Off Delay Time

23.6

Fall Time

5.1

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.88

1.2

V

0.78

Reverse Recovery Time

40.9

ns

Charge Time

20.8

Discharge Time

20.1

Reverse Recovery Charge

32

nC

4. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.