NTLTD7900NR2G datasheet(3/6 Pages) ONSEMI

Part #	NTLTD7900NR2G

Description	N?묬hannel Enhancement?묺ode Silicon Gate

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Manufacturer	ONSEMI [ON Semiconductor]

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NTLTD7900N

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TYPICAL ELECTRICAL CHARACTERISTICS

0

5

10

15

20

25

30

01

23

4

5

VGS = 2 V

1.7 V

1.4 V

TJ = 25°C

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

2.5 V

3.5 V

4.5 V

Figure 1. On−Region Characteristics

TJ = 125°C

TJ = −55°C

TJ = 25°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

VDS ≥ 10 V

0.07

0.01

0.02

0.03

0.04

12

3

4

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance versus Gate Voltage

T = 25

°C

ID = 8.5 A

0

0.01

0.02

0.03

0.04

510

15

20

25

30

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

VGS = 4.5 V

VGS = 2.5 V

TJ = 25°C

ID, DRAIN CURRENT (A)

0.6

0.8

1

1.2

1.6

−50

−25

0

25

50

75

100

125

150

TJ, TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

ID = 8.5 A

VGS = 4.5 V

100

1000

10000

100000

0

5

10

15

20

VGS = 0 V

TJ = 125°C

TJ = 150°C

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

0.05

0.06

0

5

10

15

20

25

30

01

23

1.1 V

1.4

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