NTGF3123PT1G datasheet(3/7 Pages) ONSEMI

Part #	NTGF3123PT1G

Description	Power MOSFET Single N?묬hannel

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NTGF3123P

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MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Unit

Max

Typ

Min

Test Conditions

Symbol

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDD = 10 V,

ID = 1.0 A, RG = 6.0 W

6.7

ns

Rise Time

tr

12.7

Turn−Off Delay Time

td(OFF)

13.2

Fall Time

tf

11

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Recovery Voltage

VSD

VGS = 0 V, IS = −0.8 A

TJ = 25°C

−0.8

−1.2

V

TJ = 125°C

−0.6

Reverse Recovery Time

tRR

VGS = 0 V, dISD/dt = 100 A/ms,

IS = −1.0 A

7.4

ns

Charge Time

ta

4.8

Discharge Time

tb

2.6

Reverse Recovery Time

QRR

2.4

nC

6. Switching characteristics are independent of operating junction temperatures.

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Maximum Instantaneous

Forward Voltage

VF

IF = 0.5 A

0.35

0.4

V

IF = 1.0 A

0.4

0.45

Maximum Instantaneous

Reverse Current

IR

VR = 10 V

15.7

200

mA

VR = 20 V

29.6

400

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