© Semiconductor Components Industries, LLC, 2014

July, 2014 − Rev. 4

1

Publication Order Number:

NDD02N40/D

NDD02N40, NDT02N40

N-Channel Power MOSFET

400 V, 5.5 W

Features

Compliant

Parameter

Symbol

NDD

NDT

Unit

Drain−to−Source Voltage

400

V

Gate−to−Source Voltage

±20

V

1.7

0.4

A

1.1

0.25

A

39

2.0

W

Pulsed Drain Current

6.9

1.6

A

Continuous Source Current (Body

Diode)

1.7

0.4

A

Single Pulse Drain−to−Source

EAS

120

mJ

Maximum Temperature for Soldering

Leads

260

°C

Operating Junction and Storage

Temperature

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Limited by maximum junction temperature

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

NDD02N40

3.2

°C/W

Junction−to−Ambient Steady State

NDD02N40 (Note 4)

NDD02N40−1 (Note 3)

NDT02N40 (Note 4)

NDT02N40 (Note 5)

39

96

62

151

°C/W

3. Insertion mounted

4. Surface mounted on FR4 board using 1

″ sq. pad size

(Cu area = 1.127

″ sq. [2 oz] including traces)

5. Surface−mounted on FR4 board using minimum recommended pad size

(Cu area = 0.026” sq. [2 oz]).

http://onsemi.com

400 V

5.5

W @ 10 V

N−Channel MOSFET

D (2)

S (3)

G (1)

MARKING

DIAGRAMS

Y

= Year

WW

= Work Week

2N40

= Device Code

G

= Pb−Free Package

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

1

Gate

3

Source

2

Drain

4

Drain

DPAK

CASE 369C

(Surface Mount)

STYLE 2

1 2

3

4

1

Gate

3

Source

2

Drain

4

Drain

IPAK

CASE 369D

(Straight Lead)

STYLE 2

1

2

3

4

A

= Assembly Location

Y

= Year

W

= Work Week

2N40

= Specific Device Code

G

= Pb−Free Package

AYW

2N40

G

G

(*Note: Microdot may be in either location)

SOT−223

CASE 318E

STYLE 3

1 2

3

4

2

Drain

1

Gate

3

Source

4

Drain