80714HK TC-00003142/52214TKIM No.A2301-1/5

Semiconductor Components Industries, LLC, 2014

August, 2014

http://onsemi.com

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of this data sheet.

CPH3459

Features

 Input Capacitance Ciss=90pF (typ)

 4V drive

 Protection Diode in

 Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta = 25

C

Parameter

Symbol

Conditions

Value

Unit

Drain to Source Voltage

VDSS

200

V

Gate to Source Voltage

VGSS

20

V

Drain Current (DC)

ID

0.5

A

Drain Current (Pulse)

IDP

PW

10s, duty cycle1%

2

A

Power Dissipation

PD

When mounted on ceramic substrate (900mm

2

0.8mm)

1.0

W

Junction Temperature

Tj

150

C

Storage Temperature

Tstg

55 to +150

C

Thermal Resistance Ratings

Parameter

Symbol

Value

Unit

Junction to Ambient

R

125

C/W

When mounted on ceramic substrate (900mm

2

0.8mm)

Electrical Characteristics at Ta

 25C

Parameter

Symbol

Conditions

Value

Unit

min

typ

max

Drain to Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

200

V

Zero-Gate Voltage Drain Current

IDSS

VDS=200V, VGS=0V

1

A

Gate to Source Leakage Current

IGSS

VGS=±16V, VDS=0V

10

A

Gate Threshold Voltage

VGS(th)

VDS=10V, ID=1mA

1.2

2.6

V

Forward Transconductance

gFS

VDS=10V, ID=0.25A

0.8

S

Static Drain to Source On-State Resistance

RDS(on)1

ID=0.25A, VGS=10V

2.8

3.7



RDS(on)2

ID=0.25A, VGS=4V

2.9

4.1



Continued on next page.

Ordering number : ENA2301A

Power MOSFET

200V, 3.7Ω, 0.5A, Single N-Channel

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.