NVMFS5C410NT3G datasheet(3/6 Pages) ONSEMI

Part #	NVMFS5C410NT3G

Description	Single N?묬hannel Power MOSFET

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NVMFS5C410N

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

3.0

1.5

1.0

0.5

0

40

80

160

120

200

7

4

3

2

1

0

50

100

150

300

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

10

9

8

7

6

5

4

3

0

1.0

4.0

200

250

150

100

50

0

0.50

0.60

0.75

1.00

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

150

125

100

75

25

0

−25

−50

1.0

1.2

1.4

1.6

1.8

2.0

40

35

30

25

15

5

1.E−07

4.4 V

4.8 V

10 V to 6.0 V

TJ = 125°C

TJ = 25°C

TJ = −55°C

TJ = 25°C

ID = 50 A

TJ = 25°C

VGS = 10 V

ID = 50 A

50

175

TJ = 125°C

TJ = 85°C

240

280

200

250

2.0

2.5

3.0

0.5

2.0

5.0

3.5

0.55

0.70

0.80

0.8

1.E−06

10

20

TJ = 150°C

56

0.85

0.95

VGS = 4.0 V

5.2 V

VDS = 10 V

1.5

2.5

4.5

0.65

0.90

1.E−05

1.E−04

1.E−03

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NVMFS5C410NT3G Datasheet(PDF) 3 Page - ON Semiconductor

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