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NVMFS4C03N Datasheet(PDF) 1 Page - ON Semiconductor |
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NVMFS4C03N Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 1 1 Publication Order Number: NVMFS4C03N/D NVMFS4C03N Power MOSFET 30 V, 2.1 m W, 143 A, Single N−Channel Logic Level, SO−8FL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C03NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS "20 V Continuous Drain Cur- rent RqJC (Notes 1, 2, 3) Steady State TC = 25°C ID 143 A Power Dissipation RqJC (Notes 1, 2) TC = 25°C PD 77 W Continuous Drain Cur- rent RqJA (Notes 1, 2, 3) Steady State TA = 25°C ID 31.4 A Power Dissipation RqJA (Notes 1, 2) TA = 25°C PD 3.71 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature TJ, Tstg − 55 to 175 °C Source Current (Body Diode) IS 64 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 11 A) EAS 549 mJ Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 2) RqJC 1.95 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 40 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. SO−8 FLAT LEAD CASE 488AA STYLE 1 MARKING DIAGRAM http://onsemi.com 4C03xx AYWZZ 1 V(BR)DSS RDS(on) MAX ID MAX 30 V 2.1 m W @ 10 V 143 A 2.8 m W @ 4.5 V G (4) S (1,2,3) N−CHANNEL MOSFET D (5,6) S S S G D D D D Device Package Shipping† ORDERING INFORMATION NVMFS4C03NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NVMFS4C03NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NVMFS4C03NWFT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NVMFS4C03NWFT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel 4C03N = Specific Device Code for NVMFS4C03N 4C03WF= Specific Device Code of NVMFS4C03NWF A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceabililty |
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