NVD5490NL datasheet(4/6 Pages) ONSEMI

Part #	NVD5490NL

Description	Single N?묬hannel Power MOSFET

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NVD5490NL

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TYPICAL CHARACTERISTICS

Qgs

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

40

30

20

10

0

200

400

600

800

15

10

5

0

2

4

6

8

10

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

1.5

1.0

0.5

0

5

10

15

20

25

30

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ, STARTING JUNCTION TEMPERATURE (°C)

100

10

1

0.1

0.001

0.01

0.1

1

10

100

175

150

125

100

75

50

25

0

5

10

15

20

25

VGS = 0 V

TJ = 25°C

Ciss

Coss

Crss

VDS = 48 V

ID = 9 A

TJ = 25°C

QT

Qgd

VDD = 48 V

ID = 9 A

VGS = 4.5 V

tr

tf

td(off)

td(on)

VGS = 0 V

TJ = 25°C

VGS = 10 V

Single Pulse

TC = 25°C

10 mS

100 mS

1 mS

10 mS

dc

RDS(on) Limit

Thermal Limit

Package Limit

ID = 17 A

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