MMFT3055VL

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5

DRAIN−TO−SOURCE DIODE CHARACTERISTICS

0.6 0.625

0.675

0.775

Figure 8. Gate−To−Source and Drain−To−Source

Voltage versus Total Charge

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

1

10

100

0

23

4

5

0

1.2

1.6

1000

100

10

1

10

6

2

0

1

8

4

30

27

24

21

18

15

0

6

0.8

0.65

0.7 0.725

0.4

0.75

QT

Q1

Q2

Q3

7

1

Figure 10. Diode Forward Voltage versus Current

7

3

9

5

12

3

6

9

1

1.4

0.6

0.2

0.8

89

10

0.825 0.85

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define

the maximum simultaneous drain−to−source voltage and

drain current that a transistor can handle safely when it is

forward biased. Curves are based upon maximum peak

Peak repetitive pulsed power limits are determined by using

the thermal response data in conjunction with the procedures

discussed

in

AN569,

“Transient

Thermal

Resistance−General Data and Its Use.”

Switching between the off−state and the on−state may

traverse any load line provided neither rated peak current

power averaged over a complete switching cycle must not

A Power MOSFET designated E−FET can be safely used

in switching circuits with unclamped inductive loads. For

reliable operation, the stored energy from circuit inductance

dissipated in the transistor while in avalanche must be less

than the rated limit and adjusted for operating conditions

differing from those specified. Although industry practice is

to rate in terms of energy, avalanche energy capability is not

a constant. The energy rating decreases non−linearly with an

increase of peak current in avalanche and peak junction

temperature.

Although many E−FETs can withstand the stress of

drain−to−source avalanche at currents up to rated pulsed

custom. The energy rating must be derated for temperature

as shown in the accompanying graph (Figure 13). Maximum

assumed to equal the values indicated.