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NCS2005 Datasheet(PDF) 3 Page - ON Semiconductor |
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NCS2005 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 10 page NCS2005 www.onsemi.com 3 Table 5. ELECTRICAL CHARACTERISTICS AT 10 V SUPPLY Unless otherwise noted, values are referenced to TA = 25 °C, V+ = 10 V, V− = 0 V, VCM = V+/2, and RL > 1 MW to V+/2. Boldface limits apply from TA = −40°C to 125°C. (Notes 8, 9) Parameter Test Conditions Symbol Min Typ Max Units SUPPLY CHARACTERISTICS Quiescent Supply Current No load IS 1.30 1.5 mA 1.7 Power Supply Rejection Ratio VS = 2.7 V to 30 V PSRR 113 dB 70 INPUT CHARACTERISTICS Input Offset Voltage VOS 0.2 6 mV 6 Input Offset Voltage Drift DV/DT 1 mV/°C Input Bias Current VCM = 0 V IIB 50 200 nA 200 VCM = 10 V 50 200 200 Input Offset Current VCM = 0 V IOS 2 70 nA 80 VCM = 10 V 2 70 80 Input Resistance RIN 95 M W Input Capacitance CIN 3 pF Common Mode Rejection Ratio VCM = V− to V+ CMRR 73 84 dB OUTPUT CHARACTERISTICS High−level output voltage IL = 10 mA VOH 9.65 9.80 V Low−Level Output Voltage IL = 10 mA VOL 176 300 mV Output Current Capability Sourcing current IOUT 12 mA Sinking current 20 DYNAMIC PERFORMANCE Open Loop Voltage Gain RL = 10 kW AVOL 83 107 dB Gain−Bandwidth Product RL = 10 kW GBWP 8.5 MHz Gain Margin RL = 10 kW AM 5.5 dB Phase Margin RL = 10 kW yM 65 ° Slew Rate RL = 10 kW SR 2.8 V/ ms Total Harmonic Distortion Plus Noise fIN = 1 kHz, AV = 2, RL = 2 kW THD+n 0.0015 % NOISE PERFORMANCE Voltage Noise Density f = 1 kHz eN 45 nV/ √Hz 8. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 9. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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