 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
MTW24N40E Datasheet(PDF) 2 Page - ON Semiconductor |
|
||||||||||||||||||||||||||||||
MTW24N40E Datasheet(HTML) 2 Page - ON Semiconductor |
|
|
2 / 8 page  MTW24N40E http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 400 − − 360 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 400 Vdc, VGS = 0 Vdc) (VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 10 100 µAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) 2.0 − − 7.0 4.0 − Vdc mV/ °C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 12 Adc) RDS(on) − 0.13 0.16 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 24 Adc) (ID = 12 Adc, TJ =125°C) VDS(on) − − − − 4.5 4.3 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc) gFS 11 17 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0Vd Ciss − 4000 5600 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 530 740 Reverse Transfer Capacitance f = 1.0 MHz) Crss − 112 220 SWITCHING CHARACTERISTICS (Note 2.) Turn−On Delay Time td(on) − 32 60 ns Rise Time (VDD 200= Vdc, ID = 24 Adc, VGS =10Vdc tr − 96 204 Turn−Off Delay Time VGS = 10 Vdc, RG = 9.1 Ω) td(off) − 99 194 Fall Time RG 9.1 Ω) tf − 92 186 Gate Charge (See Figure 8) QT − 98 160 nC (VDS = 320 Vdc, ID = 24 Adc, VGS = 10 Vdc) Q1 − 24 − VGS = 10 Vdc) Q2 − 38 − Q3 − 40 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 1.) (IS = 24 Adc, VGS = 0 Vdc) (IS = 24 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 0.94 0.9 1.5 − Vdc Reverse Recovery Time (S Fi 14) trr − 372 − ns (See Figure 14) (I 24 Adc V 0 Vdc ta − 244 − (IS = 24 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb − 128 − Reverse Recovery Stored Charge dIS/dt = 100 A/µs) QRR − 5.3 − µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 ″ from package to center of die) LD − 4.5 − nH Internal Source Inductance (Measured from the source lead 0.25 ″ from package to source bond pad) LS − 13 − nH 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. |
Similar Part No. - MTW24N40E |
|
Similar Description - MTW24N40E |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
allmanual.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
