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MTW24N40E Datasheet(PDF) 1 Page - ON Semiconductor |
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MTW24N40E Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 8 page  © Semiconductor Components Industries, LLC, 2000 September, 2000 − Rev. XXX 1 Publication Order Number: MTW24N40E/D MTW24N40E Preferred Device Power MOSFET 24 Amps, 400 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • I DSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage VDSS 400 Vdc Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 400 Vdc Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current − Continuous Drain Current − Continuous @ 100 °C Drain Current − Single Pulse (tp ≤ 10 µs) ID ID IDM 24 17.7 72 Adc Apk Total Power Dissipation Derate above 25 °C PD 250 2.0 Watts W/ °C Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 3.0 mH, RG = 25 Ω) EAS 600 mJ Thermal Resistance − Junction to Case Thermal Resistance − Junction to Ambient RθJC RθJA 0.50 40 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C Device Package Shipping ORDERING INFORMATION MTW24N40E TO−247 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. LL = Location Code Y = Year WW = Work Week MTW24N40E LLYWW http://onsemi.com MARKING DIAGRAM & PIN ASSIGNMENT D G TO−247AE CASE 340K Style 1 N−Channel S 24 AMPERES 400 VOLTS RDS(on) = 160 mΩ 1 2 3 4 1 Gate 3 Source 4 Drain 2 Drain |
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