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MTW24N40E Datasheet(PDF) 5 Page - ON Semiconductor |
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MTW24N40E Datasheet(HTML) 5 Page - ON Semiconductor |
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5 / 8 page  MTW24N40E http://onsemi.com 5 DRAIN−TO−SOURCE DIODE CHARACTERISTICS 0.50 0.60 0.75 0.85 0.95 0 8 16 24 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current Figure 9. Resistive Switching Time Variation versus Gate Resistance RG, GATE RESISTANCE (OHMS) 1 10 100 1000 100 10 VDD = 200 V ID = 24 A VGS = 10 V TJ = 25°C tr tf td(off) td(on) VGS = 0 V TJ = 25°C Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 600 0 500 400 300 200 100 0 8 4 0 QT, TOTAL CHARGE (nC) 12 10 6 2 20 40 60 80 100 ID = 24 A TJ = 25°C VGS VDS QT Q2 Q1 Q3 0.65 0.70 0.80 0.90 0.55 4 12 20 SAFE OPERATING AREA The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance−General Data and Its Use.” Switching between the off−state and the on−state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 µs. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) − TC)/(RθJC). A Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non−linearly with an increase of peak current in avalanche and peak junction temperature. Although many E−FETs can withstand the stress of drain−to−source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. |
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