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INA271SKGD2 Datasheet(PDF) 2 Page - Texas Instruments |
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INA271SKGD2 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 18 page IN- GND PRE OUT BUF IN OUT V+ NC IN+ 1 2 3 4 5 6 7 8 ½ ½ 762.3 m m 40.5 m m 40.5 m m 0.0 INA271-HT SBOS521D – SEPTEMBER 2010 – REVISED AUGUST 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. BARE DIE INFORMATION BACKSIDE BOND PAD BOND PAD DIE THICKNESS BACKSIDE FINISH POTENTIAL METALLIZATION COMPOSITION THICKNESS 11 mils. Silicon with backgrind GND Al-Cu (0.5%) 598 nm Table 1. Bond Pad Coordinates in Microns DISCRIPTION PAD NUMBER X min Y min X max Y max IN- 1 64.35 1012.41 139.41 1087.47 GND 2 61.83 648.81 136.89 723.87 PRE OUT 3 61.83 520.29 136.89 595.35 BUF IN 4 70.92 152.37 145.98 227.43 OUT 5 616.32 152.37 691.38 227.43 V+ 6 621.99 386.55 697.05 461.61 NC 7 622.44 648.81 697.5 723.87 IN+ 8 622.89 1012.41 697.95 1087.47 2 Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: INA271-HT |
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