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NCE15GD120T Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

Part # NCE15GD120T
Description  1200V, 15A, Trench NPT IGBT
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Manufacturer  NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]
Direct Link  http://www.ncepower.com
Logo NCEPOWER - Wuxi NCE Power Semiconductor Co., Ltd

NCE15GD120T Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

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Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0
NCE15GD120T
Pb Free Product
Thermal Characteristics
Symbol Parameter
Typ.
Max.
Units
R JC
Thermal Resistance, Junction to Case
-
0.57
°C/W
RJA
Thermal Resistance, Junction to Ambient
-
40
°C/W
Electrical Characteristics of the IGBT T
C=25°C
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Units
Off Characteristics
BVCES
Collector to Emitter
Breakdown Voltage
VGE=0V, Ic=1mA
1200
-
-
V
ICES
Collector Cut-Off Current
VCE= VCES, VGE=0V
-
-
1
mA
IGES
G-E Leakage Current
VGE= VGES, VCE=0V
-
-
+/-250
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC=15mA, VCE=VGE
4.0
5.5
7.0
V
IC=15A, VGE=15V
TC=25°C
-
2
2.5
V
VCE(sat)
Collector to Emitter Saturation
Voltage
IC=15A, VGE=15V
TC=125°C
-
2.15
-
V
Dynamic Characteristics
Cies
Input Capacitance
-
2350
-
pF
Coes
Output Capacitance
-
70
-
pF
Cres
Reverse Transfer
Capacitance
VCE=30V, VGE=0V,
f=1MHz
-
45
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
33
-
ns
tr
Rise Time
-
80
-
ns
td(off)
Turn-Off Delay Time
-
160
-
ns
tf
Fall Time
-
255
330
ns
Eon
Turn-On Switching Loss
-
0.3
-
mJ
Eoff
Turn-Off Switching Loss
-
0.58
0.74
mJ
Ets
Total Switching Loss
VCC=600V,IC=15A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=25°C
-
0.88
-
mJ
td(on)
Turn-On Delay Time
-
30
-
ns
tr
Rise Time
-
115
-
ns
td(off)
Turn-Off Delay Time
-
170
-
ns
tf
Fall Time
-
390
-
ns
Eon
Turn-On Switching Loss
-
0.38
-
mJ
Eoff
Turn-Off Switching Loss
-
0.89
-
mJ
Ets
Total Switching Loss
VCC=600V,IC=15A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=125°C
-
1.27
-
mJ
Qg
Total Gate Charge
-
100
-
nC
Qge
Gate to Emitter Charge
-
19
-
nC
Qgc
Gate to Collector Charge
VCC=600V,IC=15A,
VGE=15V
-
45
-
nC


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