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LM5106 Datasheet(PDF) 5 Page - Texas Instruments

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Part # LM5106
Description  100-V Half-Bridge Gate Driver With Programmable Dead-Time
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LM5106 Datasheet(HTML) 5 Page - Texas Instruments

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LM5106
www.ti.com
SNVS424D – JANUARY 2006 – REVISED DECEMBER 2014
6.4 Thermal Information
LM5102
THERMAL METRIC(1)
DGS
DPR(2)
UNIT
10 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
165.3
37.9
RθJC(top)
Junction-to-case (top) thermal resistance
58.9
38.1
RθJB
Junction-to-board thermal resistance
54.4
14.9
°C/W
ψJT
Junction-to-top characterization parameter
6.2
0.4
ψJB
Junction-to-board characterization parameter
83.6
15.2
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
4.4
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report (SPRA953).
(2)
Four-layer board with Cu finished thickness 1.5 oz, 1 oz, 1 oz, 1.5 oz. Maximum die size used. 5x body length of Cu trace on PCB top.
50-mm × 50-mm ground and power planes embedded in PCB. See Application Note AN-1187 Leadless Leadframe Package (LLP)
(SNOA401).
6.5 Electrical Characteristics
MIN and MAX limits apply over the full operating junction temperature range. Unless otherwise specified, TJ = +25°C, VDD =
HB = 12 V, VSS = HS = 0 V, EN = 5 V. No load on LO or HO. RDT= 100kΩ
(1).
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENTS
IDD
VDD Quiescent Current
IN = EN = 0 V
0.34
0.6
mA
IDDO
VDD Operating Current
f = 500 kHz
2.1
3.5
mA
IHB
Total HB Quiescent Current
IN = EN = 0 V
0.06
0.2
mA
IHBO
Total HB Operating Current
f = 500 kHz
1.5
3
mA
IHBS
HB to VSS Current, Quiescent
HS = HB = 100 V
0.1
10
µA
IHBSO
HB to VSS Current, Operating
f = 500 kHz
0.5
mA
INPUT IN and EN
VIL
Low Level Input Voltage Threshold
0.8
1.8
V
VIH
High Level Input Voltage Threshold
1.8
2.2
V
Rpd
Input Pulldown Resistance Pin IN and EN
100
200
500
k
DEAD-TIME CONTROLS
VRDT
Nominal Voltage at RDT
2.7
3
3.3
V
IRDT
RDT Pin Current Limit
RDT = 0 V
0.75
1.5
2.25
mA
UNDERVOLTAGE PROTECTION
VDDR
VDD Rising Threshold
6.2
6.9
7.6
V
VDDH
VDD Threshold Hysteresis
0.5
V
VHBR
HB Rising Threshold
5.9
6.6
7.3
V
VHBH
HB Threshold Hysteresis
0.4
V
LO GATE DRIVER
VOLL
Low-Level Output Voltage
ILO = 100 mA
0.21
0.4
V
VOHL
ILO = –100 mA,
High-Level Output Voltage
0.5
0.85
V
VOHL = VDD – VLO
IOHL
Peak Pullup Current
LO = 0 V
1.2
A
IOLL
Peak Pulldown Current
LO = 12 V
1.8
A
HO GATE DRIVER
VOLH
Low-Level Output Voltage
IHO = 100 mA
0.21
0.4
V
VOHH
IHO = –100 mA,
High-Level Output Voltage
0.5
0.85
V
VOHH = HB – HO
(1)
Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
Copyright © 2006–2014, Texas Instruments Incorporated
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