NVD6495NL

http://onsemi.com

2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

100

92

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

115

mV/

°C

Zero Gate Voltage Drain Current

1.0

mA

100

Gate−to−Source Leakage Current

"100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

1.0

2.0

V

Negative Threshold Temperature

Coefficient

4.8

mV/

°C

Drain−to−Source On−Resistance

44

54

mW

43

50

Forward Transconductance

24

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

1024

pF

Output Capacitance

156

Reverse Transfer Capacitance

70

Total Gate Charge

20

nC

Threshold Gate Charge

1.1

Gate−to−Source Charge

3.1

Gate−to−Drain Charge

14

Total Gate Charge

35

nC

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

11

ns

Rise Time

91

Turn−Off Delay Time

40

Fall Time

71

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.87

1.2

V

0.74

Reverse Recovery Time

64

ns

Charge Time

40

Discharge Time

24

Reverse Recovery Charge

152

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

ORDERING INFORMATION

Device

Package

NVD6495NLT4G

DPAK

(Pb−Free)

2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification Brochure, BRD8011/D.