NDF60N550U1, NDD60N550U1

http://onsemi.com

2

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

600

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

TBD

mV/°C

Drain−to−Source Leakage Current

1

mA

50

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

2

TBD

4

V

Negative Threshold Temperature

Coefficient

TBD

mV/°C

Static Drain-to-Source On Resistance

530

550

mW

Forward Transconductance

TBD

S

DYNAMIC CHARACTERISTICS

Input Capacitance

540

pF

Output Capacitance

45

Reverse Transfer Capacitance

1

Total Gate Charge

20

nC

Gate-to-Source Charge

TBD

Gate-to-Drain Charge

TBD

Plateau Voltage

TBD

V

Gate Resistance

TBD

W

RESISTIVE SWITCHING CHARACTERISTICS (Note 3)

Turn-on Delay Time

TBD

ns

Rise Time

TBD

Turn-off Delay Time

TBD

Fall Time

TBD

SOURCE−DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage

TBD

1.6

V

TBD

Reverse Recovery Time

TBD

ns

Charge Time

TBD

Discharge Time

TBD

Reverse Recovery Charge

TBD

nC

2. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.