NDD60N360U1-1G datasheet(2/9 Pages) ONSEMI

Part #	NDD60N360U1-1G

Description	N-Channel Power MOSFET

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NDF60N360U1, NDD60N360U1

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS =0V, ID =1mA

600

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

Reference to 25°C, ID = 1 mA

560

mV/°C

Drain−to−Source Leakage Current

IDSS

VDS = 600 V, VGS =0V

TJ =25°C

1

mA

TJ = 125°C

100

Gate−to−Source Leakage Current

IGSS

VGS = ±25 V

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID = 250 mA

2

3.2

4

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

Reference to 25°C, ID = 250 mA

8.6

mV/°C

Static Drain-to-Source On Resistance

RDS(on)

VGS =10V, ID = 5.5 A

320

360

mW

Forward Transconductance

gFS

VDS =15V, ID = 5.5 A

10

S

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

VDS =50V, VGS = 0 V, f = 1 MHz

790

pF

Output Capacitance

Coss

47

Reverse Transfer Capacitance

Crss

3.0

Effective output capacitance, energy

related (Note 7)

Co(er)

VGS = 0 V, VDS = 0 to 480 V

38.9

Effective output capacitance, time

related (Note 8)

Co(tr)

ID = constant, VGS = 0 V,

VDS = 0 to 480 V

135

Total Gate Charge

Qg

VDS = 300 V, ID = 13 A, VGS =10V

26

nC

Gate-to-Source Charge

Qgs

4.7

Gate-to-Drain Charge

Qgd

12.9

Plateau Voltage

VGP

5.6

V

Gate Resistance

Rg

4.5

W

RESISTIVE SWITCHING CHARACTERISTICS (Note 6)

Turn-on Delay Time

td(on)

VDD = 300 V, ID =13A,

VGS =10V, RG = 0 W

10

ns

Rise Time

tr

20

Turn-off Delay Time

td(off)

26

Fall Time

tf

22

SOURCE−DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage

VSD

IS = 13 A, VGS =0V

TJ =25°C

0.93

1.6

V

TJ = 100°C

0.86

Reverse Recovery Time

trr

VGS =0V, VDD =30V

IS = 13 A, di/dt = 100 A/ms

303

ns

Charge Time

ta

206

Discharge Time

tb

97

Reverse Recovery Charge

Qrr

3.6

mC

5. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

7. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS

8. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS

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NDD60N360U1-1G Datasheet(PDF) 2 Page - ON Semiconductor

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