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NDBA170N06AT4H Datasheet(PDF) 1 Page - ON Semiconductor |
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NDBA170N06AT4H Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page D1113 TKIM TC-00003075 No. A2250-1/6 Semiconductor Components Industries, LLC, 2013 December, 2013 http://onsemi.com NDBA170N06A Features • On-resistance RDS(on)=2.5mΩ(typ.) • Input Capacitance Ciss=15800pF(typ.) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25 °C Parameter Symbol Value Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 170 A Drain Current (DC) Limited by Package IDL 100 A Drain Current (Pulse) PW ≤10μs, duty cycle≤1% IDP 600 A Power Dissipation Tc=25 °C PD 90 W Junction Temperature Tj 150 °C Storage Temperature Tstg - 55 to +150 °C Avalanche Energy (Single Pulse) * 1 EAS 571 mJ Avalanche Current * 2 IAV 70 A Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds TL 260 °C Thermal Resistance Ratings Parameter Symbol Value Unit Junction- to-Case(Drain) Steady State R θJC 1.39 °C/W Junction-to-Ambient * 3 R θJA 62.5 Ordering & Package Information Device Package Shipping NDBA170N06AT4H Pb-free and Halogen Free TO-263 800 pcs. / reel Note : *1 VDD=36V, L=100μH, IAV=70A (Fig.1) *2 L ≤100μH, Single Pulse *3 Surface mounted on FR4 board using recommended footprint N-Channel Power MOSFET 60V, 170A, 3.3mΩ, TO-263 Ordering number : ENA2250 Electrical Connection N-channel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. G(1) S(3) D(2, 4) TL Marking Packing Type:TL 1 2 3 4 TO-263 CASE 418AJ 170N06 A LOT No. |
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