NCP6914

http://onsemi.com

7

Table 4. ELECTRICAL CHARACTERISTICS

configuration (Note 10)

Symbol

Unit

Max

Typ

Min

Conditions

Parameter

HWEN

Positive Going Input High Voltage

Threshold

1.1

−

−

V

Negative Going Input Low Voltage

Threshold

−

−

0.4

V

Hardware Enable Filter

HWEN rising and falling (Note 11)

4

−

9

ms

Hardware Enable Pull−Down

(input bias current)

−

0.1

1

mA

PG

Power Good Low Threshold

(percentage of FB voltage)

86

90 of

94

%

Power Good Hysteresis

(percentage of Power Good Low

0

3

5

%

Power Good Reaction Time for

DCDC

Falling (Note 11)

Rising (Note 11)

−

4

5

−

−

9

ms

Power Good Low Output Voltage

−

−

0.2

V

Power Good Leakage Current

3.6 V at PG pin when power good valid

−

−

100

nA

Power Good High Output Voltage

Open drain

−

−

5.5

V

INTB

INTB Low Output Voltage

0

−

0.2

V

INTB High Output Voltage

Open drain

−

−

5.5

V

INTB Leakage Current

3.6 V at INTB pin when INTB valid

−

−

100

nA

High Level at SCL/SDA Line

−

−

5.0

V

SCL, SDA Low Input Voltage

SCL, SDA pin (Notes 9 and 11)

−

−

0.5

V

SCL, SDA High Input Voltage

SCL, SDA pin (Notes 9 and 11)

−

−

V

SCL, SDA Low Output Voltage

−

−

0.4

V

−

−

3.4

MHz

TOTAL DEVICE

Under Voltage Lockout

−

−

2.3

V

Under Voltage Lockout Hysteresis

60

−

200

mV

Thermal Shut Down Protection

150

°C

Warning Rising Edge

135

°C

Thermal Shut Down Hysteresis

35

°C

10. Refer to the Application Information section of this data sheet for more details.

11. Guaranteed by design and characterized.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.