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MTBA0N10KJ3 Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTBA0N10KJ3 Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C139J3 Issued Date : 2015.09.30 Revised Date : Page No. : 2/ 9 MTBA0N10KJ3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage (Note 1) VDS 100 Gate-Source Voltage VGS ±20 V Continuous Drain Current @TC=25 °C, VGS=10V (Note 1) 13.4 Continuous Drain Current @TC=100 °C, VGS=10V (Note 1) ID 8.5 Continuous Drain Current @TA=25 °C, VGS=10V (Note 2) 3.7 Continuous Drain Current @TA=70 °C, VGS=10V (Note 2) IDSM 3.0 Pulsed Drain Current @ VGS=10V (Note 3) IDM 33 Avalanche Current IAS 13.4 A Single Pulse Avalanche Energy @ L=0.1mH, ID=13.4A, VDD=25V (Note 4) EAS 9 mJ TC=25 °C (Note 1) 33 TC=100 °C (Note 1) PD 13 TA=25 °C (Note 2) 2.5 Power Dissipation TA=70 °C (Note 2) PDSM 1.6 W Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 3.8 Thermal Resistance, Junction-to-ambient, max (Note 2) RθJA 50 °C/W Note : 1 .The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 .The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. 3 . Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=100μH, IAS=7A, VGS=10V, VDD=25V |
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