Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.0

2

NCE3420

Pb Free Product

http://www.ncepower.com

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

0.5

0.7

1.0

V

-

27

35

mΩ

Drain-Source On-State Resistance

-

20

28

mΩ

Forward Transconductance

-

25

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

515

-

PF

Output Capacitance

-

90

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

72

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

3

-

nS

Turn-on Rise Time

-

7.5

-

nS

Turn-Off Delay Time

-

20

-

nS

Turn-Off Fall Time

-

6

-

nS

Total Gate Charge

-

12

-

nC

Gate-Source Charge

-

1

-

nC

Gate-Drain Charge

-

2

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

-

1.2

V

Diode Forward Current

(Note 2)

-

-

6

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 .

%

4. Guaranteed by design, not subject to production