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WPB4002 Datasheet(PDF) 1 Page - ON Semiconductor |
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WPB4002 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page 82813 TKIM TC-00002977/60910QB TK IM TC-00002373 No. A1769-1/5 http://onsemi.com Semiconductor Components Industries, LLC, 2013 August, 2013 WPB4002 N-Channel Power MOSFET 600V, 23A, 0.36Ω, TO-3P-3L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Features • Reverse recovery time trr=115ns (typ) • 10V drive • Input capacitance Ciss=2200pF (typ) • ON-resistance RDS(on)=0.28Ω (typ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID 23 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 80 A Source to Drain Diode Forward Current (DC) ISD 23 A Source to Drain Diode Forward Current (Pulse) ISDP PW≤10μs, duty cycle≤1% 80 A Allowable Power Dissipation PD 2.5 W Tc=25°C 220 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 157 mJ Avalanche Current *2 IAV 17 A Note : *1 VDD=50V, L=1mH, IAV=17A (Fig.1) *2 L≤1mH, single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 600 V Zero-Gate Voltage Drain Current IDSS VDS=480V, VGS=0V 100 μA Gate to Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 35 V Forward Transfer Admittance | yfs | VDS=10V, ID=11.5A 7.5 15 S Static Drain to Source On-State Resistance RDS(on) ID=11.5A, VGS=10V 0.28 0.36 Ω Input Capacitance Ciss VDS=30V, f=1MHz 2200 pF Output Capacitance Coss 400 pF Reverse Transfer Capacitance Crss 83 pF Turn-ON Delay Time td(on) See Fig.2 42 ns Rise Time tr 130 ns Turn-OFF Delay Time td(off) 234 ns Fall Time tf 84 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=23A 84 nC Gate to Source Charge Qgs 15.2 nC Gate to Drain “Miller” Charge Qgd 45.4 nC Diode Forward Voltage VSD IS=23A, VGS=0V 1.1 1.5 V Reverse Recovery Time trr See Fig.3 ISD=23A, VGS=0V, di/dt=100A/μs 115 ns Reverse Recovery Charge Qrr 340 nC Ordering number : ENA1769A ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. TO-3P-3L |
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