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SFT1458-H Datasheet(PDF) 1 Page - ON Semiconductor |
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SFT1458-H Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page O1613 TKIM TC-00002994 No. A2207-1/5 Semiconductor Components Industries, LLC, 2013 October, 2013 http://onsemi.com SFT1458 Features • On-resistance RDS(on)=10Ω(typ.) • 10V drive • Input Capacitance Ciss=65pF(typ.) • Halogen free compliance • Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25 °C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID 1A Drain Current (Pulse) IDP PW ≤10μs, duty cycle≤1% 4 A Allowable Power Dissipation PD 1W Tc=25 °C 38 W Channel Temperature Tch 150 °C Storage Temperature Tstg - 55 to +150 °C Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Ratings Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 600 V Zero-Gate Voltage Drain Current IDSS VDS=480V, VGS=0V 100 μA Gate to Source Leakage Current IGSS VGS=±24V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 4.5 V Forward Transfer Admittance | yfs | VDS=10V, ID=0.5A 0.57 S Static Drain to Source On-State Resistance RDS(on) ID=0.5A, VGS=10V 10 13 Ω Input Capacitance Ciss VDS=20V, f=1MHz 65 pF Output Capacitance Coss 20 pF Reverse Transfer Capacitance Crss 4.5 pF Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns Rise Time tr 11 ns Turn-OFF Delay Time td(off) 12 ns Fall Time tf 60 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=1A 3.8 nC Gate to Source Charge Qgs 0.54 nC Gate to Drain “Miller” Charge Qgd 2.3 nC Diode Forward Voltage VSD IS=1A, VGS=0V 0.93 1.2 V N-Channel Power MOSFET 600V, 1.0A, 13Ω, Single TP/TP-FA Ordering number : ENA2207 ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
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