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CEM2281 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEM2281 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page http://www.cetsemi.com Rev 1. 2006.July This is preliminary information on a new product in development now . Details are subject to change without notice . P-Channel Enhancement Mode Field Effect Transistor CEM2281 FEATURES -20V, -7.2A, RDS(ON) = 30mΩ @VGS = -4.5V. RDS(ON) = 43mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM -20 2.5 -30 -7.2 ±12 V W A A V 1 SO-8 1 D D D D S S S G 1 2 3 4 8 7 6 5 Lead free product is acquired. PRELIMINARY Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W 50 R θJA |
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