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NCE01H13D Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE01H13D Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
1 / 7 page NCE01H13D Pb Free Product http://www.ncepower.com Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 1 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =130A RDS(ON) <6.8mΩ @ VGS=10V (Typ:5.3mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-263-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE01H13D NCE01H13D TO-263-2L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 130 A Drain Current-Continuous(TC=100℃) ID (100℃) 92 A Pulsed Drain Current IDM 500 A Maximum Power Dissipation PD 285 W Derating factor 1.9 W/℃ Single pulse avalanche energy (Note 5) EAS 1100 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ |
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