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2SK715 Datasheet(PDF) 1 Page - ON Semiconductor |
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2SK715 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page Publication Order Number : 2SK715/D ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 1 www.onsemi.com 2SK715 N-Channel JFET 15V, 7.3 to 24mA, 50mS 1 Applications • AM Tuner RF Amp, Low-noise Amp • HF Low-noise Amp Features • Adoption of FBET Process • Large yfs • Small Ciss • Very Low Noise Figure Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Ratings Unit Drain-to-Source Voltage VDSS 15 V Gate-to-Drain Voltage VGDS --15 V Gate Current IG 10 mA Drain Current ID 50 mA Allowable Power Dissipation PD 300 mW Junction Temperature Tj 125 °C Storage Temperature Tstg --55 to +125 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Gate-to-Drain Breakdown Voltage V(BR)GDS IG=--10mA, VDS=0V --15 V Gate-to-Source Leakage Current IGSS VGS=--10V, VDS=0V --1.0 nA Zero-Gate Voltage Drain Current IDSS* VDS=5V, VGS=0V 7.3* 24.0* mA Cutoff Voltage VGS(off) VDS=5V, ID=100mA --0.6 --1.4 V Forward Transfer Admittance | yfs | VDS=5V, VGS=0V, f=1kHz 25 50 mS Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz 10 pF Reverse Transfer Capacitance Crss 3.0 pF Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.5 dB *:The2SK715isclassifiedbyIDSS as follows : (unit : mA) Rank U V W IDSS 7.3 to 12.0 10.0 to 17.0 14.5 to 24.0 2SK715U-AC 2SK715V-AC 2SK715W-AC TO-92-3 / SPA-WA K715 LOT No. 1 3 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Connection Marking 1 : Source 2 : Gate 3 : Drain Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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