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TPS2839 Datasheet(PDF) 8 Page - Texas Instruments |
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TPS2839 Datasheet(HTML) 8 Page - Texas Instruments |
8 / 28 page TPS2838, TPS2839 TPS2848, TPS2849 SLVS367A − MARCH 2001 − REVISED JUNE 2001 8 www.ti.com electrical characteristics over recommended operating virtual junction temperature range, VCC = 12 V, ENABLE = High, CL = 3.3 nF (unless otherwise noted) (continued) low-side driver PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(VDRV) = 4 V, V(LOWDR) = 0.5 V (src) 1 1.6 V(VDRV) = 4 V, TJ = 25°C, See Note 2 V(LOWDR) = 4 V (sink) 2 2.4 Peak output current V(VDRV) = 8 V, V(HIGHDR) = 0.5 V (src) 2 2.4 A Peak output current V(VDRV) = 8 V, TJ = 25°C, See Note 2 V(HIGHDR) = 8 V (sink) 2 3.3 A V(VDRV) = 14 V (src), V(HIGHDR) = 0.5 V (src) 2 3.9 V(VDRV) = 14 V (src), TJ = 25°C, See Note 2 V(HIGHDR) = 14 V (sink) 2 4.4 V(VDRV) = 4.5 V, V(LOWDR) = 4 V (src) 30 V(VDRV) = 4.5 V, TJ = 25°C V(LOWDR) = 0.5 V (sink) 8 ro Output resistance V(VDRV) = 7.5 V, V(LOWDR) = 7 V (src) 25 Ω ro Output resistance V(VDRV) = 7.5 V, TJ = 25°C V(LOWDR) = 0.5 V (sink) 7 Ω V(VDRV)= 11.5 V, V(LOWDR) = 11 V (src) 22 V(VDRV)= 11.5 V, TJ = 25°C V(LOWDR) = 0.5 V (sink) 6 LOWDR-to-PGND resistor 250 k Ω CL = 3.3 nF, TJ = 125°C, V(VDRV) = 4 V 60 CL = 3.3 nF, TJ = 125°C, See Note 2 V(VDRV) = 8 V 50 tr/tf Rise and fall time See Note 2 V(VDRV) = 14 V 40 ns tr/tf Rise and fall time CL = 10 nF, TJ = 125°C, V(VDRV) = 4 V 110 ns CL = 10 nF, TJ = 125°C, See Note 2 V(VDRV) = 8 V 100 See Note 2 V(VDRV) = 14 V 80 Propagation delay time, LOWDR TJ = 125°C, V(VDRV) = 4 V 110 ns tPLH Propagation delay time, LOWDR going high (excluding deadtime) TJ = 125°C, See Notes 2 and 3 V(VDRV) = 8 V 90 ns tPLH going high (excluding deadtime) See Notes 2 and 3 V(VDRV) = 14 V 80 ns NOTES: 2: Ensured by design, not production tested. 3: The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the combined current from the bipolar and MOSFET transistors. The output resistance is the rDS(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. VCC undervoltage lockout PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Start threshold voltage 10.3 V Stop threshold voltage 7.5 V Vhys Hysteresis voltage 1 1.5 V tpd Propagation delay time 50-mV overdrive, See Note 2 300 1000 ns td Falling-edge delay time See Note 2 2 5 us NOTE 2: Ensured by design, not production tested. |
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