© Semiconductor Components Industries, LLC, 2008

November, 2008 − Rev. P0

1

Publication Order Number:

NUP4107UPMU/D

NUP4107UPMU

Product Preview

Low Capacitance ESD

Protection Array for High

Speed Data Line Protection

The NUP4107UPMU ESD protection array is designed to protect

high speed data lines from ESD. Ultra−low capacitance and high level

of ESD protection makes this device well suited for use in USB 2.0

applications.

Features

and Class C (Exceeding 400 V) per Machine Model

IEC 61000−4−2 (12 kV Contact)

Typical Applications

Rating

Symbol

Value

Unit

Operating Junction Temperature Range

−40 to +125

°C

Storage Temperature Range

−55 to +150

°C

Lead Solder Temperature −

Maximum (10 Seconds)

260

°C

Human Body Model (HBM)

Machine Model (MM)

IEC 61000−4−2 Contact (ESD)

ESD

16000

400

12000

V

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

http://onsemi.com

UDFN6 1.6x1.6

MU SUFFIX

CASE 517AP

Device

Package

ORDERING INFORMATION

NUP4107UPMUTAG UDFN6

(Pb−Free)

3000/Tape & Reel

1

3

I/O

I/O

2

NC

I/O

4 I/O

5

6

PIN CONNECTIONS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

XX MG

G

1

XX

= Specific Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

GND

MARKING

DIAGRAM

1

6

45

6

31