CPH5617-TL-E datasheet(2/6 Pages) ONSEMI

Part #	CPH5617-TL-E

Description	N-Channel Power MOSFET

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CPH5617

No.7370-2/6

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain to Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

30

V

Zero-Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0V

10

μA

Gate to Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=10V, ID=100μA

0.4

1.3

V

Forward Transfer Admittance

| yfs |

VDS=10V, ID=80mA

0.15

0.22

S

Static Drain to Source On-State Resistance

RDS(on)1

ID=80mA, VGS=4V

2.9

3.7

Ω

RDS(on)2

ID=40mA, VGS=2.5V

3.7

5.2

Ω

RDS(on)3

ID=10mA, VGS=1.5V

6.4

12.8

Ω

Input Capacitance

Ciss

VDS=10V, f=1MHz

7.0

pF

Output Capacitance

Coss

5.9

pF

Reverse Transfer Capacitance

Crss

2.3

pF

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

19

ns

Rise Time

tr

65

ns

Turn-OFF Delay Time

td(off)

155

ns

Fall Time

tf

120

ns

Total Gate Charge

Qg

VDS=10V, VGS=10V, ID=150mA

1.58

nC

Gate to Source Charge

Qgs

0.26

nC

Gate to Drain “Miller” Charge

Qgd

0.31

nC

Diode Forward Voltage

VSD

IS=150mA, VGS=0V

0.87

1.2

V

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

CPH5617-TL-E

CPH5

3,000pcs./reel

Pb Free

PW=10μs

D.C.≤1%

4V

0V

VIN

P.G

50Ω

G

S

ID=80mA

RL=187.5Ω

VDD=15V

VOUT

VIN

D

CPH5617

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CPH5617-TL-E Datasheet(PDF) 2 Page - ON Semiconductor

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