PBSS8110X_15 datasheet(4/15 Pages) PHILIPS

Part #	PBSS8110X

Description	100 V, 1 A NPN low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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4 / 15 page

PBSS8110X_2

Product data sheet

Rev. 02 — 11 December 2009

4 of 15

NXP Semiconductors

PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

227

K/W

[2] --89

K/W

[3] --63

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

--16

K/W

FR4 PCB; standard footprint

Fig 2.

Transient thermal impedance from junction to ambient as a function of pulse time; typical values

006aaa409

10

1

102

103

Zth(j-a)

(K/W)

10−1

10−5

10

10−2

10−4

102

10−1

tp (s)

10−3

103

1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

duty cycle =

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