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ACE4884 Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE4884 Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE4884 N-Channel Enhancement Mode MOSFET VER 1.1 1 Description The ACE4884 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. Features N-Channel 40V/10A,RDS(ON)= 20m Ω@VGS= 10V 40V/ 8A,RDS(ON)= 24m Ω@VGS= 4.5V 40V/ 6A,RDS(ON)= 30m Ω@VGS= 2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings TA=25℃ Unless otherwise noted Parameter Symbol Typical Unit Drain-Source Voltage 40 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ ID 10.0 A TA=70℃ 8.0 Pulsed Drain Current IDM 25 A Continuous Source Current(Diode Conduction) Is 2.3 A Power Dissipation TA=25℃ PD 2.5 W TA=70℃ 1.6 Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient T ≤ 10sec RθJA 50 ℃/W Steady State 80 |
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