ACE4884

N-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE4884 is the Dual N-Channel enhancement mode power field effect transistors are produced

using high cell density , DMOS trench technology. This high density process is especially tailored to

minimize on-state resistance and provide superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer power management and other battery

powered circuits where high-side switching , low in-line power loss, and resistance to transients are

needed.

Features

 N-Channel

 Super high density cell design for extremely low RDS (ON)

 Exceptional on-resistance and maximum DC current capability

APPLICATIONS

 Power Management in Note book

 Portable Equipment

 Battery Powered System

 DC/DC Converter

 Load Switch

 DSC

 LCD Display inverter

Absolute Maximum Ratings

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

40

V

Gate –Source Voltage

VGSS

±20

V

10.0

A

8.0

Pulsed Drain Current

25

A

Continuous Source Current(Diode Conduction)

Is

2.3

A

Power Dissipation

2.5

W

1.6

Operating Junction Temperature

-55/150

℃

Storage Temperature Range

-55/150

℃

Thermal Resistance-Junction to

Ambient

T

≤ 10sec

50

℃/W

Steady State

80