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ACE4468B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE4468B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE4468B N-Channel Enhancement Mode MOSFET VER 1.1 1 Description The ACE4468B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. -RoHS Compliant Features • V DS (V)=30V • I D=11.6A (VGS=10V) • R DS(ON) <14 mΩ (V GS=10V) • R DS(ON) <22 mΩ (V GS=4.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous)*AC TA=25℃ ID 11.6 A TA=70℃ 9.2 Drain Current (Pulsed)*B IDM 50 A Power Dissipation TA=25℃ PD 3 W TA=70℃ 2 Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type SOP-8 Ordering information ACE4468BFM + H FM : SOP-8 Pb - free Halogen - free |
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