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ACE2N7002BM Datasheet(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE2N7002BM Datasheet(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 5 page ACE2N7002 N-Channel Enhancement Mode Field Effect Transistor VER 1.1 2 Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Off characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-10uA 60 V Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0V 1 Ua Gate Threshold Voltage VGS(th) VGS= VDS, lDS=250 uA 1.0 1.85 2.5 V Gate Leakage Current IGSS VGS=+20V, VDS=0V 10 uA Drain-Source On-state Resistance RDS(ON) VGS=10V, ID=0.5A 7.5 Ω VGS=5V, ID=0.05A 7.5 Ω Forward Transconductance gFS VDS=10V, ID=-0.5A 15 S Switching characteristics(3) Turn-On Delay Time Td(on) ID=0.19, VDS=30V VGS=10V,RL=155Ω 12 ns Turn-Off Delay Time td(off) 20 Dynamic characteristics(3) Input Capacitance Ciss VGS=0V, VDS=25V f=1.0MHz 52 pF Output Capacitance Coss 7.7 Reverse Transfer Capacitance Crss 3.9 Note: 1. Pulse test: PW≦300us, duty cycle≦1% Typical Performance Characteristics |
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