2N3440 datasheet(1/3 Pages) ONSEMI

Part #	2N3440

Description	Low Power Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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January, 2011 − Rev. P1

1

Publication Order Number:

2N3440/D

2N3440

Product Preview

Low Power Transistor

NPN Silicon

Features

• MIL−PRF−19500/368Qualified

• Available as JAN, JANTX, and JANTXV

• Hermetically Sealed Commercial Product with Option for Military

Temperature Range Screening

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

250

Vdc

Collector−Base Voltage

VCBO

300

Vdc

Emitter−Base Voltage

VEBO

7.0

Vdc

Collector Current − Continuous

IC

1.0

Adc

Total Device Dissipation @ TA = 25°C

PT

800

mW

Total Device Dissipation @ TC = 25°C

PT

5.0

W

Operating and Storage Junction

Temperature Range

TJ, Tstg

−65 to

+200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

175

°C/W

Thermal Resistance, Junction to Case

RqJC

30

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

http://onsemi.com

COLLECTOR

3

2

BASE

1

EMITTER

TO−39

CASE 205AB

STYLE 1

Device

Package

Shipping

ORDERING INFORMATION

2N3440

TO−39

Bulk

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