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NSD350H Datasheet(PDF) 2 Page - ON Semiconductor |
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NSD350H Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page NSD350H www.onsemi.com 2 Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 µA) V(BR)R 350 V Reverse Leakage (VR = 300 V) IR 150 nA Reverse Leakage (VR = 350 V) IR 5 mA Forward Voltage (IF = 100 mA) VF 1.1 V Total Capacitance (VR = 0 V, f = 1.0 MHz) CT 5.0 pF Reverse Recovery Time (IF = IR = 10 mA, IR(rec) = 1.0 mA, Figure 1) trr 55 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Notes: 1. A 2.0 k W variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr +10 V 2 k 820 W 0.1 mF DUT VR 100 mH 0.1 mF 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE tr tp T 10% 90% IF IR trr T iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit |
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