NL3HS2222MUTBG datasheet(3/10 Pages) ONSEMI

Part #	NL3HS2222MUTBG

Description	High-Speed USB 2.0 DPDT Switches

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NL3HS2222

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DC ELECTRICAL CHARACTERISTICS

CONTROL INPUT, OUTPUT ENABLE VOLTAGE (Typical: T = 25

°C)

Symbol

Pins

Parameter

Test Conditions

VCC (V)

−40

°C to +85°C

Unit

Min

Typ

Max

VIH

S, OE

Control Input, Output

Enable HIGH Voltage

(See Figure 11)

2.7

3.3

4.2

1.25

1.3

1.4

−

V

VIL

S, OE

Control Input, Output

Enable LOW Voltage

(See Figure 11)

2.7

3.3

4.2

−

0.35

0.4

0.5

V

IIN

S, OE

Current Input, Output

Enable Leakage Current

0

≤ VIS ≤ VCC

1.65 − 4.5

−

±1.0

mA

SUPPLY CURRENT AND LEAKAGE (Typical: T = 25

°C, VCC = 3.3 V)

Symbol

Pins

Parameter

Test Conditions

VCC (V)

−40

°C to +85°C

Unit

Min

Typ

Max

ICC

VCC

Quiescent Supply Current

0

≤ VIS ≤ VCC; ID = 0 A

0

≤ VIS ≤ VCC − 0.5 V

1.65 − 3.6

3.6 − 4.5

−

1.0

mA

IOZ

OFF State Leakage

0

≤ VIS ≤ VCC

1.65 − 4.5

−

±0.1

±1.0

mA

IOFF

D+, D−

Power OFF Leakage

Current

0

≤ VIS ≤ VCC

0

−

±1.0

mA

LIMITED VIS SWING ON RESISTANCE (Typical: T = 25°C)

Symbol

Pins

Parameter

Test Conditions

VCC (V)

−40

°C to +85°C

Unit

Min

Typ

Max

RON

On−Resistance (Note 1)

ION = 8 mA

VIS = 0 V to 0.4 V

2.7

3.3

4.2

−

6.0

5.5

5.0

8.6

7.6

7.0

W

RFLAT

On−Resistance Flatness

(Notes 1 and 2)

ION = 8 mA

VIS = 0 V to 0.4 V

2.7

3.3

4.2

−

0.55

0.30

0.20

−

W

DRON

On−Resistance Matching

(Notes 1 and 3)

ION = 8 mA

VIS = 0 V to 0.4 V

2.7

3.3

4.2

−

0.60

−

W

1. Guaranteed by design.

2. Flatness is defined as the difference between the maximum and minimum value of On−Resistance as measured over the specified analog

signal ranges.

3.

DRON = RON(max) − RON(min) between HSD1+ and HSD1− or HSD2+ and HSD2−.

FULL VIS SWING ON RESISTANCE (Typical: T = 25°C)

Symbol

Pins

Parameter

Test Conditions

VCC (V)

−40

°C to +85°C

Unit

Min

Typ

Max

RON

On−Resistance

ION = 8 mA

VIS = 0 V to VCC

2.7

3.3

4.2

−

10

8.0

7.0

13.5

9.75

8.50

W

RFLAT

On−Resistance Flatness

(Notes 4 and 5)

ION = 8 mA

VIS = 0 V to VCC

2.7

3.3

4.2

−

4.5

3.0

2.5

−

W

DRON

On−Resistance

(Note 4 and 6)

ION = 8 mA

VIS = 0 V to VCC

2.7

3.3

4.2

−

0.60

−

W

4. Guaranteed by design.

5. Flatness is defined as the difference between the maximum and minimum value of On−Resistance as measured over the specified analog

signal ranges.

6.

DRON = RON(max) − RON(min) between HSD1+ and HSD1− or HSD2+ and HSD2−.

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