NGTG25N120FL2WG datasheet(5/10 Pages) ONSEMI

Part #	NGTG25N120FL2WG

Description	IGBT - Field Stop II

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Manufacturer	ONSEMI [ON Semiconductor]

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NGTG25N120FL2WG

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5

TYPICAL CHARACTERISTICS

td(off)

Figure 12. Switching Loss vs. Rg

Rg, GATE RESISTOR (

W)

45

35

25

15

5

VCE = 600 V

VGE = 15 V

TJ = 150°C

IC = 25 A

55

65

75

85

Figure 13. Switching Time vs. Rg

Rg, GATE RESISTOR (

W)

45

35

25

15

5

1000

55

65

75

85

Figure 14. Switching Loss vs. VCE

VCE, COLLECTOR−EMITTER VOLTAGE (V)

550

500

450

400

350

800

600

VGE = 15 V

TJ = 150°C

IC = 25 A

Rg = 10

W

Figure 15. Switching Time vs. VCE

VCE, COLLECTOR−EMITTER VOLTAGE (V)

1000

Figure 16. Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (V)

1000

100

10

1

0.1

1

10

100

1000

50

ms

100

ms

1 ms

dc operation

Single Nonrepetitive

Pulse TC = 25°C

Curves must be derated

linearly with increase

in temperature

Figure 17. Reverse Bias Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (V)

1

10

100

1000

VGE = 15 V, TC = 125°C

1000

100

10

1

tf

td(off)

VCE = 600 V

VGE = 15 V

TJ = 150°C

IC = 25 A

10

VGE = 15 V

TJ = 150°C

IC = 25 A

Rg = 10

W

10

6

5

4

3

2

1

0

2

1

0

550

500

450

400

350

800

600

10k

650

700

750

4

3

650

700

750

100

td(on)

tr

tf

td(on)

tr

100

EON

EOFF

EON

EOFF

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