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NVMFD5483NLWFT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NVMFD5483NLWFT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. 3 1 Publication Order Number: NVMFD5483NL/D NVMFD5483NL Power MOSFET 60 V, 36 m W, 24 A, Dual N−Channel Features • Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • 175°C Operating Temperature • NVMFD5483NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS "20 V Continuous Drain Current RqJC (Notes 1, 2, 4) Steady State TC = 25°C ID 24 A TC = 100°C 17 Power Dissipation RqJC (Notes 1, 2) TC = 25°C PD 44.1 W TC = 100°C 22.1 Continuous Drain Current RqJA (Notes 1, 3 & 4) Steady State TA = 25°C ID 6.4 A TA = 100°C 4.5 Power Dissipation RqJA (Notes 1 & 3) TA = 25°C PD 3.1 W TA = 100°C 1.5 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 153 A Operating Junction and Storage Temperature TJ, Tstg − 55 to 175 °C Source Current (Body Diode) IS 39 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 28 A, L = 0.1 mH) EAS 39 mJ Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 2) RqJC 3.4 °C/W Junction−to−Ambient − Steady State (Note 3) RqJA 49 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted to an ideal (infinite) heat sink. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Maximum current for pulses as long as 1 second are higher but are dependent on pulse duration and duty cycle. ORDERING INFORMATION www.onsemi.com Device Package Shipping† V(BR)DSS RDS(on) MAX ID MAX 60 V 36 m W @ 10 V 24 A †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DFN8 5x6 (SO8FL) CASE 506BT MARKING DIAGRAM 45 m W @ 4.5 V NVMFD5483NLT1G DFN8 (Pb−Free) 1500/ Tape & Reel XXXXXX = 5483NL XXXXXX = (NVMFD5483NL) or XXXXXX = 5483LW XXXXXX = (NVMFD5483NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability D1 D1 D2 D2 S1 G1 S2 G2 Dual N−Channel D1 S1 G1 XXXXXX AYWZZ 1 D2 D1 D2 S2 G2 D2 D1 NVMFD5483NLWFT1G DFN8 (Pb−Free) 1500/ Tape & Reel NVMFD5483NLWFT3G DFN8 (Pb−Free) 5000/ Tape & Reel NVMFD5483NLT3G DFN8 (Pb−Free) 5000/ Tape & Reel |
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