NVMFD5483NLWFT1G datasheet(1/6 Pages) ONSEMI

Part #	NVMFD5483NLWFT1G

Description	Power MOSFET Dual N?묬hannel

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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May, 2015 − Rev. 3

1

Publication Order Number:

NVMFD5483NL/D

NVMFD5483NL

Power MOSFET

60 V, 36 m

W, 24 A, Dual N−Channel

Features

• Small Footprint (5x6 mm) for Compact Designs

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• 175°C Operating Temperature

• NVMFD5483NLWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• This is a Pb−Free Device

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

60

V

Gate−to−Source Voltage

VGS

"20

V

Continuous Drain

Current RqJC

(Notes 1, 2, 4)

Steady

State

TC = 25°C

ID

24

A

TC = 100°C

17

Power Dissipation

RqJC (Notes 1, 2)

TC = 25°C

PD

44.1

W

TC = 100°C

22.1

Continuous Drain

Current RqJA

(Notes 1, 3 & 4)

Steady

State

TA = 25°C

ID

6.4

A

TA = 100°C

4.5

Power Dissipation

RqJA (Notes 1 & 3)

TA = 25°C

PD

3.1

W

TA = 100°C

1.5

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

153

A

Operating Junction and Storage Temperature

TJ, Tstg

− 55 to

175

°C

Source Current (Body Diode)

IS

39

A

Single Pulse Drain−to−Source Avalanche

Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 28 A,

L = 0.1 mH)

EAS

39

mJ

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State (Note 2)

RqJC

3.4

°C/W

Junction−to−Ambient − Steady State (Note 3)

RqJA

49

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted to an ideal (infinite) heat sink.

3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

4. Maximum current for pulses as long as 1 second are higher but are dependent

on pulse duration and duty cycle.

ORDERING INFORMATION

www.onsemi.com

Device

Package

Shipping†

V(BR)DSS

RDS(on) MAX

ID MAX

60 V

36 m

W @ 10 V

24 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

DFN8 5x6

(SO8FL)

CASE 506BT

MARKING DIAGRAM

45 m

W @ 4.5 V

NVMFD5483NLT1G

DFN8

(Pb−Free)

1500/

Tape & Reel

XXXXXX = 5483NL

XXXXXX = (NVMFD5483NL) or

XXXXXX = 5483LW

XXXXXX = (NVMFD5483NLWF)

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

D1

D2

S1

G1

S2

G2

Dual N−Channel

D1

S1

G1

XXXXXX

AYWZZ

1

D2

D1

D2

S2

G2

D2

D1

NVMFD5483NLWFT1G

DFN8

(Pb−Free)

1500/

Tape & Reel

NVMFD5483NLWFT3G

DFN8

(Pb−Free)

5000/

Tape & Reel

NVMFD5483NLT3G

DFN8

(Pb−Free)

5000/

Tape & Reel

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