SZESD7205M3T5G datasheet(2/8 Pages) ONSEMI

Part #	SZESD7205M3T5G

Description	ESD Protection Diodes

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Manufacturer	ONSEMI [ON Semiconductor]

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ESD7205, SZESD7205

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ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Uni−Directional TVS

IPP

IF

V

I

IR

IT

VRWM

VC VBR

VF

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working

Voltage

VRWM

I/O Pin to GND

5.0

V

Breakdown Voltage

VBR

IT = 1 mA, I/O Pin to GND

5.2

6.0

8.0

V

Reverse Leakage

Current

IR

VRWM = 5.0 V, I/O Pin to GND

1

mA

Clamping Voltage

(Note 1)

VC

IEC61000−4−2,

±8 kV Contact

See Figures 3 and 4

Clamping Voltage TLP

(Note 2)

VC

IPP = 8 A

IPP = 16 A

IPP = −8 A

IPP = −16 A

10

12.5

−4.0

−8.0

V

Junction Capacitance

Match

DCJ

VR = 0 V, f = 1 MHz between I/O1 to GND and I/O

2 to GND

5

10

%

Junction Capacitance

CJ

VR = 0 V, f = 1 MHz between I/O Pins

0.2

0.35

pF

Junction Capacitance

CJ

VR = 0 V, f = 1 MHz between I/O Pins and GND

0.4

0.55

pF

3dB Bandwidth

fBW

RL = 50 W

5

GHz

1. For test procedure see Figures 5 and 6 and application note AND8307/D.

2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.

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