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SG2842N Datasheet(PDF) 11 Page - Microsemi Corporation |
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SG2842N Datasheet(HTML) 11 Page - Microsemi Corporation |
11 / 14 page C URRENT -M ODE PWM C ONTROLLER SG1842/SG1843 Series PRODUCT DA T ABOOK 1996/1997 11 Copyright © 2000 Rev. 1.6 4/00 P RODUCTION D ATA S HEET TYPICAL APPLICA TION CIRCUITS FIGURE 18. — ISOLATED MOSFET DRIVE FIGURE 17. — BIPOLAR TRANSISTOR DRIVE Current transformers can be used where isolation is required between PWM and Primary ground. A drive transformer is then necessary to interface the PWM output with the MOSFET. The 1842/43 output stage can provide negative base current to remove base charge of power transistor (Q 1) for faster turn off. This is accomplished by adding a capacitor (C 1) in parallel with a resistor (R 1). The resistor (R 1) is to limit the base current during turn on. Pin numbers referenced are for 8-pin package and pin numbers in parenthesis are for 14-pin package. FIGURE 15. — CURRENT-SENSE SPIKE SUPPRESSION FIGURE 16. — MOSFET PARASITIC OSCILLATIONS A resistor (R 1) in series with the MOSFET gate reduce overshoot and ringing caused by the MOSFET input capacitance and any induc- tance in series with the gate drive. (Note: It is very important to have a low inductance ground path to insure correct operation of the I.C. This can be done by making the ground paths as short and as wide as possible.) The RC low pass filter will eliminate the leading edge current spike caused by parasitics of Power MOSFET. V CC V IN 7 (12) 7 (11) 6 (10) 5 (8) 3 (5) R C R S Q1 I PK I PK(MAX) = 1.0V R S SG1842/43 V IN V CC 7 (12) 7 (11) 6 (10) 5 (8) R S Q1 SG1842/43 3 (5) R 1 SG1842/43 3 (5) 5 (8) 6 (10) 7 (11) R S Q1 V C1 C 1 R 1 R 2 V IN V C I B + V C R 2 » V C1 R 1||R2 » _ V CC V IN 7 (12) 7 (11) 6 (10) 5 (8) 3 (5) SG1842/43 Isolation Boundary C R R S N S N P Q1 Waveforms + _0 + _0 50% DC 25% DC I PK = V (PIN 1) - 1.4 3R S N P N S |
Similar Part No. - SG2842N |
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Similar Description - SG2842N |
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